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Journal of Materials Science
Published in: Journal of Materials Science 19/2019

25-06-2019 | Electronic materials

Correlation of efficient luminescence with crystal structures of y-Er2Si2O7 and α-Er2Si2O7 in Er-doped silicon oxide films

Authors: Yuhan Gao, Qianyu Fu, Hao Shen, Dongsheng Li, Deren Yang

Published in: Journal of Materials Science | Issue 19/2019

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Abstract

We have investigated the fabrication and luminescent properties of different polymorphs of erbium (Er) silicate in Er-doped silicon oxide films. Silicon oxide films embedded with y-Er2Si2O7 and α-Er2Si2O7 layers have been fabricated with annealing at 1100 °C and 1150 °C, respectively. We demonstrate that y-Er2Si2O7 shows a stronger photoluminescence (PL) intensity, a longer PL lifetime, and a weaker PL thermal quenching effect than α-Er2Si2O7 due to the larger density of optically active Er ions, larger Er–Er average distance, higher symmetry, and stronger Er-O bonding. The Er lifetime–density product of y-Er2Si2O7 is as high as 3.5 × 1018 s cm−3 and is at least 2.4 times as large as that of α-Er2Si2O7 making y-Er2Si2O7 an excellent candidate for high optical gain.
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Metadata
Title
Correlation of efficient luminescence with crystal structures of y-Er2Si2O7 and α-Er2Si2O7 in Er-doped silicon oxide films
Authors
Yuhan Gao
Qianyu Fu
Hao Shen
Dongsheng Li
Deren Yang
Publication date
25-06-2019
Publisher
Springer US
Published in
Journal of Materials Science / Issue 19/2019
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-019-03783-3

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