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Published in: Journal of Materials Science: Materials in Electronics 11/2017

15-02-2017

Crystallization behavior, densification and microwave dielectric properties in MgO–Al2O3–SiO2–TiO2-based glass–ceramics with B2O3 addition

Authors: Fei Liu, Xianpei Huang, Jingjing Qu, ChangLai Yuan, Guohua Chen, Qin Feng

Published in: Journal of Materials Science: Materials in Electronics | Issue 11/2017

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Abstract

Glass–ceramics with a mass composition (wt%) of 19MgO–23Al2O3–53SiO2–4TiO2 with x wt% B2O3 addition (x = 2.5, 3, 3.5 and 4, abbreviated as samples B2.5, B3, B3.5 and B4) were prepared by two-step heat treatment of the parent glass at selected nucleation temperatures for 2 h and crystallization temperatures for 2h/20h, respectively. X-ray diffraction analysis revealed that the main crystalline phases of MgSiO3 and SiO2 could be successfully fabricated at relative low temperature (<1000 °C). With increasing B2O3 addition from 2.5 to 4 wt%, the nucleation temperature of the glass–ceramics was lowered from 820 to 740 °C. The content of main crystal phases for the B3 sample heat-treated at 850 °C/2 h + 950 °C/20 h was higher than that of other samples. Additionally, the dielectric properties of the B3 sample were closely dependent on not only its nucleation temperatures, crystalline temperatures and sintering time, but also its crystalline phases. Wherein, after two-stage heat treatment (850 °C/2 h + 950 °C/20 h), the good microwave dielectric properties of a lower \({{\varepsilon }_{r}}\) ~ 4.08, a higher Q × f ~ 14580 GHz (13.801 GHz) and a near-zero \({{t}_{f}}\tilde{\ }\)3.9 ppm/°C were obtained in the B3 sample.

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Metadata
Title
Crystallization behavior, densification and microwave dielectric properties in MgO–Al2O3–SiO2–TiO2-based glass–ceramics with B2O3 addition
Authors
Fei Liu
Xianpei Huang
Jingjing Qu
ChangLai Yuan
Guohua Chen
Qin Feng
Publication date
15-02-2017
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 11/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-6524-3

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