Top

Microsystem Technologies

Published in:

15-04-2020 | Technical Paper

DC and analog/RF performance analysis of gate extended U-shaped channel tunnel field effect transistor

Authors: Radhe Gobinda Debnath, Karabi Baruah, Srimanta Baishya

Published in: Microsystem Technologies | Issue 9/2020

Activate our intelligent search to find suitable subject content or patents.

search-config

AI-assisted search

Off

Abstract

The DC and Analog/RF performance of Gate Extended-U-shaped channel tunneling field-effect transistors (GE-UTFET) was examined in this study. The performance of the device was investigated through technology computer added design in terms of transconductance (g_m), intrinsic capacitances (C_gg, C_gs, and C_gd), cut-off frequency (f_T), and gain-bandwidth product (f_A). Simulation results show that GE-UTFET has an improved DC characteristic than UTFET. Also, the better RF performance of GE-UTFET than UTFET makes it more suitable for high-frequency application which is attributed to the reduced miller capacitance (C_gd) and enhanced g_m.

previous article MEMS based antenna of energy harvester for wireless sensor node

next article An experimental study on precision positioning characteristics of shape memory alloy actuator

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

inform now

Abdi DB, Kumar MJ (2014) In-built N+ pocket p-n-p-n tunnel field-effect transistor. IEEE Electron Device Lett 35:1170–1172. https://doi.org/10.1109/LED.2014.2362926 CrossRef

Agarwal S, Klimeck G, Luisier M (2010) Leakage-reduction design concepts for low-power vertical tunneling field-effect transistors. IEEE Electron Device Lett 31:621–623. https://doi.org/10.1109/LED.2010.2046011 CrossRef

Asra R, Shrivastava M, Murali KVRM et al (2011) A tunnel FET for V_DD scaling below 0.6 V with a CMOS-comparable performance. IEEE Trans Electron Devices 58:1855–1863. https://doi.org/10.1109/TED.2011.2140322 CrossRef

Avci UE, Morris DH, Young IA (2015) Tunnel field-effect transistors: prospects and challenges. J Electron Device Soc 3:88–95. https://doi.org/10.1109/JEDS.2015.2390591 CrossRef

Bhuwalka KK, Sedlmaier S, Ludsteck AK et al (2004) Vertical tunnel field effect transistor. IEEE Trans Electron Device 51:279–282CrossRef

Cao W, Yao CJ, Jiao GF et al (2011) Improvement in reliability of tunneling field-effect transistor with p-n-i-n structure. IEEE Trans Electron Devices 58:2122–2126. https://doi.org/10.1109/TED.2011.2144987 CrossRef

Chen Y, Fan M, Member S et al (2014) Evaluation of stability, performance of mixed TFET-MOSFET SRAM cell with write-assist circuits. IEEE J Emerg Sel Top Circuits Syst 4:389–399. https://doi.org/10.1109/JETCAS.2014.2361072 CrossRef

Choi WY, Park B, Lee JD, Liu TK (2007) Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett 28:743–745CrossRef

Dash S, Shankar G, Prasad G (2016) Improved cut-off frequency for cylindrical gate TFET using source delta doping. Proc Technol 25:450–455. https://doi.org/10.1016/j.protcy.2016.08.131 CrossRef

Datta S, Liu H, Narayanan V (2014) Tunnel FET technology: a reliability perspective. Microelectron Reliab 54:861–874. https://doi.org/10.1016/j.microrel.2014.02.002 CrossRef

Fuketa H, Yoshioka K, Fukuda K, Mori T (2015) Design guidelines to achieve minimum energy operation for ultra low voltage tunneling FET logic circuits. Jpn J Appl Phys 54:4–9. https://doi.org/10.7567/JJAP.54.04DC04 CrossRef

Hoyniak D, Nowak E, Anderson RL, Anderson RL (2013) Channel electron mobility dependence on lateral electric field in field-effect transistors. J Appl Phys 87:876–881. https://doi.org/10.1063/1.371955 CrossRef

Ionescu AM (2008) New functionality and ultra low power: key opportunities for post-CMOS era. Int Symp VLSI Tech Sys Appl 21:72–73. https://doi.org/10.1109/VTSA.2008.4530804 CrossRef

Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479:329–337. https://doi.org/10.1038/nature10679 CrossRef

Kim SH, Kam H, Hu C, Liu TK (2009) Germanium-source tunnel field effect transistors with record high I_ON/I_OFF. Symp VLSI Technol 2009:178–179

Narang R, Saxena M, Gupta RS, Gupta M (2012) Assessment of ambipolar behavior of a tunnel FET and influence of structural modifications. J Semicond Technol Sci 12:482–491. https://doi.org/10.5573/JSTS.2012.12.4.482 CrossRef

Paill G, R ICUM, Poincare A, Cedex A (2004) Influence of a Tunneling gate current on the noise performance of SO1 MOSFETs. In: 2004 IEEE international SO1 conference, pp 55–57

Sentaurus User's Manual (2014) Synopsys Inc., Mountain View, CA. v.2014.06

Strangio S, Palestri P, Esseni D et al (2015) Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells. IEEE J Electron Devices Soc 3:223–232. https://doi.org/10.1109/JEDS.2015.2392793 CrossRef

Verhulst AS, Vandenberghe WG, Maex K et al (2012) Tunnel field-effect transistor without gate-drain overlap. Appl Phys Lett 91:053102–053106. https://doi.org/10.1063/1.2757593 CrossRef

Vijayvargiya V, Vishvakarma SK (2014) Effect of drain doping profile on double-gate tunnel field-effect transistor and its influence on device RF performance. IEEE Trans Nanotechnol 13:974–981. https://doi.org/10.1109/TNANO.2014.2336812 CrossRef

Wang P, Hilsenbeck K, Nirschl T et al (2004) Complementary tunneling transistor for low power application. Solid State Electron 48:2281–2286. https://doi.org/10.1016/j.sse.2004.04.006 CrossRef

Wang W, Sun Y, Wang H et al (2016) Investigation of light doping and hetero gate dielectric carbon nanotube tunneling field-effect transistor for improved device and circuit-level performance. Semicond Sci Technol 31:35002–35013. https://doi.org/10.1088/0268-1242/31/3/035002 CrossRef

Wang W, Sun Y, Wang H et al (2017) Analog/RF performance of L and U-shaped channel tunneling field-effect transistors and their application as digital inverters. Jpn J Appl Phys 56:064102–064113. https://doi.org/10.7567/JJAP.56.064102 CrossRef

Wang W, Wang P, Zhang C et al (2014) Design of U-shape channel tunnel FETs with SiGe source regions. IEEE Trans Electron Devices 61:193–197. https://doi.org/10.1109/TED.2013.2289075 CrossRef

Yang Y, Tong X, Yang L et al (2010) Tunneling field-effect transistor : capacitance components and modeling. IEEE Electron Device Lett 31:752–754. https://doi.org/10.1109/LED.2010.2047240 CrossRef

Yang Z (2016) Tunnel field-effect transistor with an L-shaped gate. IEEE Electron Device Lett 37:839–842. https://doi.org/10.1109/LED.2016.2574821 CrossRef

Title: DC and analog/RF performance analysis of gate extended U-shaped channel tunnel field effect transistor
Authors: Radhe Gobinda Debnath
Karabi Baruah
Srimanta Baishya
Publication date: 15-04-2020
Publisher: Springer Berlin Heidelberg
Published in: Microsystem Technologies / Issue 9/2020
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI: https://doi.org/10.1007/s00542-020-04846-1

Springer Professional

Abstract

Please log in to get access to your license.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Other articles of this Issue 9/2020

Dynamic characteristics and experiment of push–pull high-power ultrasonic consolidation resonance system for metal foil

Influence of geometric parameters on the fluidic and mixing characteristics of T-shaped micromixer

Design, fabrication, and characterization of SU-8/carbon black nanocomposite based polymer MEMS acceleration sensor

Directional liquid spreading on laser textured aluminum surface

Process windows of ultrasonic thermoforming of micro structures

Dynamic modeling of syringe-pump-actuated microliquid-dispensing system by a bond-graph approach