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Published in: Journal of Materials Science: Materials in Electronics 21/2018

06-09-2018

Dependence of photoluminescence on doping concentration of Ho3+ in nanocrystalline La(OH)3

Authors: V. Anslin Ferby, Mohamed Bououdina, A. Moses Ezhil Raj

Published in: Journal of Materials Science: Materials in Electronics | Issue 21/2018

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Abstract

Pure and Ho3+ doped La(OH)3 phosphor nanoparticles have been synthesized through auto-combustion method. XRD patterns exhibited sharp peaks indicating the formation of highly crystalline hexagonal lattice with cell constants a = 6.5218 Ǻ and c = 3.8460 Ǻ. The dissolution of Ho3+ ions within La(OH)3 host lattice resulted increase in lattice parameters and unit cell volume. Optical properties have been altered with Ho3+ doping; the band gap increases from 4.25 eV for pure up to 5.48 eV for 10 wt% Ho doped samples. Green emission around 495, 506, 520, 535 and 544 nm corresponded to (5F4, 5S2) → 5I8 transition, in which the excited electrons nonradioactively transferred to the level 5F5 and then radiate the energy on transferring to the ground state. Observed intense green emission is due to participation of more number of Ho3+ ions in the excitation process and the populations of the ions in the excited states. The CIE coordinate values confirm that Ho-doped La(OH)3 phosphors are relatively useful for green emission photonic devices. The enhancement in the lifetime of 5F4/5S2 level of Ho3+ ion is a clear evidence for an increase in the emission intensity. The improvement in the crystallinity has resulted in an increase in the lifetime of the emitting levels, and thereby an enhancement of the quick excitation, energy transfer and radiative transitions.

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Metadata
Title
Dependence of photoluminescence on doping concentration of Ho3+ in nanocrystalline La(OH)3
Authors
V. Anslin Ferby
Mohamed Bououdina
A. Moses Ezhil Raj
Publication date
06-09-2018
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 21/2018
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9995-y

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