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Fundamentals of Sputtering Read chapter Read first chapter

1984 | OriginalPaper | Chapter

Depth Profiling of Dopant Distribution in Small Area Transistors

Authors : H. N. Migeon, A. E. Morgan

Published in: Secondary Ion Mass Spectrometry SIMS IV

Publisher: Springer Berlin Heidelberg

Included in: Professional Book Archive

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The analysis of semiconductor devices in research and development has to deal with: Narrow structures (up to few micrometers),Thin layers from 0.01 to 10 micrometers,Low concentrations of doping elements. The SIMS technique has been extensively used for depth profiling of dopant distribution in large analyzed areas. In this paper,some examples of depth profiles obtained in transistors as small as 4 micrometers across will be shown.

previous chapter Practical Limitations in Depth Profiling of Low Energy Implants into Amorphised and Crystalline Silicon
next chapter Comparison of Oxygen and Indium Primary Ion Beams for SIMS-Depth Profiling
Metadata
Title
Depth Profiling of Dopant Distribution in Small Area Transistors
Authors
H. N. Migeon
A. E. Morgan
Copyright Year
1984
Publisher
Springer Berlin Heidelberg
Book
Secondary Ion Mass Spectrometry SIMS IV

Print ISBN: 978-3-642-82258-2

Electronic ISBN: 978-3-642-82256-8

Copyright Year: 1984

DOI
https://doi.org/10.1007/978-3-642-82256-8_79