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Journal of Materials Science: Materials in Electronics

Published in:

01-04-2015

Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc

Authors: Suat Pat, Şadan Korkmaz, Soner Özen, Volkan Şenay

Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2015

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Abstract

Using a thermionic vacuum arc, single‐crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films produced in a very short time. Crystal direction was found to be (111) plane for the GaAs/PET sample and (022) plane and (133) plane for the GaAs/glass sample, respectively. The average roughness values of the deposited thin films were determined to be approximately 30 nm for GaAs/PET and 60 nm for GaAs/glass. The structures can be seen clearly in field emission scanning electron microscopy and atomic force microscopy. The obtained optical band is nearly the same with literatures values of the GaAs. Although produced structures in different crystal formations, only aggregations dimensions and absorbance of the layers were changed. Obtained refractive index values are nearly same with database info.

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Title: Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc
Authors: Suat Pat
Şadan Korkmaz
Soner Özen
Volkan Şenay
Publication date: 01-04-2015
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 4/2015
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-015-2670-7

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