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Journal of Materials Science

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01-01-2010

Direct detection of electron spins and doping effects in spin-polarized electron transport in gallium arsenide

Author: M. Idrish Miah

Published in: Journal of Materials Science | Issue 1/2010

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Abstract

The spin Hall effect allows the direct detection of spins in semiconductors. In this study, electron spins in n-doped gallium arsenide are detected and the effects of n-type doping in gallium arsenide under drift are studied. It is found that the effects in the spin-polarized electron transport increase with increasing doping density in the moderate range, indicating that the introduction of n-type dopants increases the electron-spin lifetimes in gallium arsenide. However, the transport drifting by a high field shows no effects because of destroying the electron-spin polarization in n-doped gallium arsenide. The results are discussed in details.

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Title: Direct detection of electron spins and doping effects in spin-polarized electron transport in gallium arsenide
Author: M. Idrish Miah
Publication date: 01-01-2010
Publisher: Springer US
Published in: Journal of Materials Science / Issue 1/2010
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-009-3901-1

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