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Published in: Measurement Techniques 3/2013

01-06-2013 | NANOMETROLOGY

Distortion of the Profile of Surface Relief Elements of Single-Crystal Silicon Caused by Contamination in a Low-Voltage Scanning Electron Microscope

Authors: V. P. Gavrilenko, A. Yu. Kuzin, V. B. Mityukhlyaev, A. V. Rakov, P. A. Todua, M. N. Filippov, V. A. Sharonov

Published in: Measurement Techniques | Issue 3/2013

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Abstract

This is a study of the influence of contamination in an S-4800 scanning electron microscope at electron energies of 1 keV on the profile of the surface relief elements of an MShPS-2.0K standard gauge. The observed width of the upper base of the relief elements is found to increase with electron irradiation dose in different irradiation modes.

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Metadata
Title
Distortion of the Profile of Surface Relief Elements of Single-Crystal Silicon Caused by Contamination in a Low-Voltage Scanning Electron Microscope
Authors
V. P. Gavrilenko
A. Yu. Kuzin
V. B. Mityukhlyaev
A. V. Rakov
P. A. Todua
M. N. Filippov
V. A. Sharonov
Publication date
01-06-2013
Publisher
Springer US
Published in
Measurement Techniques / Issue 3/2013
Print ISSN: 0543-1972
Electronic ISSN: 1573-8906
DOI
https://doi.org/10.1007/s11018-013-0186-1

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