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Journal of Materials Science: Materials in Electronics

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05-05-2020

Effect of annealing temperature on physical and electrical properties of solution-processed polycrystalline In₂Ga₂ZnO₇ thin film

Authors: Nabihah Kasim, Zainuriah Hassan, Way Foong Lim, Hock Jin Quah

Published in: Journal of Materials Science: Materials in Electronics | Issue 12/2020

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Abstract

Influence of annealing temperature on the properties of In₂Ga₂ZnO₇ (IGZO) thin film prepared using sol–gel method was extensively studied. Annealing treatment at four different temperatures (300, 500, 700 and 900 °C) has transformed the amorphous IGZO to polycrystalline IGZO. The increase in annealing temperature to 900 °C encouraged the formation of interfacial layer on the underlying Si substrate. As a result, a decrement in film current conductivity was perceived and the sample annealed at 900 °C was determined as the closest to having insulating properties. More characterization regarding the structural, morphological and optical characteristics of the annealed films was discussed in this study.

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Title: Effect of annealing temperature on physical and electrical properties of solution-processed polycrystalline In2Ga2ZnO7 thin film
Authors: Nabihah Kasim
Zainuriah Hassan
Way Foong Lim
Hock Jin Quah
Publication date: 05-05-2020
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 12/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-020-03516-2

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