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Published in: Journal of Materials Science: Materials in Electronics 9/2012

01-09-2012

Effect of CaO-doped in NiMn2O4–LaMnO3 composite ceramics on microstructure and electrical properties

Authors: Fang Guan, Huimin Zhang, Aimin Chang, Pengjun Zhao, Bo Zhang

Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2012

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Abstract

The composite ceramics (NiMn2O4)0.50(La1−x Ca x MnO3)0.50 (0 ≤ x ≤ 0.3) consisting of spinel-structured NiMn2O4 and perovskite-structured CaO-doped LaMnO3 were prepared by classical solid state reaction. The X-ray diffraction (XRD) patterns have shown that the major phases presented in the sintered samples are NiMn2O4 compounds with a spinel structure, La1−x Ca x MnO3 with a perovskite structure. The Scanning Electron Microscope (SEM) pictures have exhibited that the grain size of the composite ceramics decreases from ca. 6.5 to 2.0 μm as the mole fraction of CaO increases from 0 to 0.3. The ρ 25 °C and B 25/50 constants of the composite samples are in the range of 0.234–8.61 Ω cm and 2,600–2,962 K, respectively. In particular, CaO-doped leads to a decrease in the resistance drift of the (NiMn2O4)0.50(La1−x Ca x MnO3)0.50 composite NTC (negative temperature coefficient) ceramics after aging test. This indicates that the CaO-doped (NiMn2O4)0.50(La1−x Ca x MnO3)0.50 NTC ceramics display high electrical stability in comparison with the Ca-free (NiMn2O4)0.50(LaMnO3)0.50 ceramics. The X-ray photoelectron spectroscopy (XPS) analysis verifies that the valence states of the manganese ions have a highly mixed state of Mn2+, Mn3+ and Mn4+ at B site. And the electrical conduction of the composite ceramics can be elaborated by the ions migration mechanism.

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Metadata
Title
Effect of CaO-doped in NiMn2O4–LaMnO3 composite ceramics on microstructure and electrical properties
Authors
Fang Guan
Huimin Zhang
Aimin Chang
Pengjun Zhao
Bo Zhang
Publication date
01-09-2012
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 9/2012
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-012-0654-4

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