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Optical and Quantum Electronics

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01-08-2020

Effect of device parameters on improving the quantum efficiency of a lateral Si p–i–n photodetector

Authors: Paulami Rakshit, Nikhil R. Das

Published in: Optical and Quantum Electronics | Issue 8/2020

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Abstract

Quantum efficiency of CMOS compatible multi-diode lateral Si p–i–n photodetector is calculated using two-dimensional transport in the form of carrier diffusion from substrate along the vertical direction and drift along the horizontal (lateral) direction. The model verified with experimental data from literature are used to compute and plot the quantum efficiency as a function of device parameters, such as number of diodes, trench depth, finger spacing, etc. Results show that the device parameters can be suitably chosen to improve the quantum efficiency. Possible optimum designs with respect to some parameters are also indicated for maximum quantum efficiency and maximum bandwidth-quantum efficiency product.

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Title: Effect of device parameters on improving the quantum efficiency of a lateral Si p–i–n photodetector
Authors: Paulami Rakshit
Nikhil R. Das
Publication date: 01-08-2020
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 8/2020
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-020-02490-7

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