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Semiconductors
Published in: Semiconductors 11/2007

01-11-2007 | Low-Dimensional Systems

Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers

Authors: M. V. Shaleev, A. V. Novikov, A. N. Yablonskiĭ, O. A. Kuznetsov, Yu. N. Drozdov, D. N. Lobanov, Z. F. Krasil’nik

Published in: Semiconductors | Issue 11/2007

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previous article Specific features of dissipation of electronic excitation energy in coupled molecular solid systems based on silicon nanocrystals on intense optical pumping
next article Raman scattering in semiconductor structures based on monophthalocyanine and triphthalocyanine molecules incorporating erbium ions

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Metadata
Title
Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers
Authors
M. V. Shaleev
A. V. Novikov
A. N. Yablonskiĭ
O. A. Kuznetsov
Yu. N. Drozdov
D. N. Lobanov
Z. F. Krasil’nik
Publication date
01-11-2007
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 11/2007
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782607110152

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Electronic and Optical Properties of Semiconductors

Large-magnitude spin polarization of electrons in an InAs-based diode structure

Low-Dimensional Systems

Integer quantum Hall effect and correlated disorder

Electronic and Optical Properties of Semiconductors

Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites

Raman scattering in semiconductor structures based on monophthalocyanine and triphthalocyanine molecules incorporating erbium ions

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