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Semiconductors
Published in: Semiconductors 7/2020

01-07-2020 | SURFACES, INTERFACES, AND THIN FILMS

Effect of Interfaces and Thickness on the Crystallization Kinetics of Amorphous Germanium Films

Authors: G. K. Krivyakin, V. A. Volodin, G. N. Kamaev, A. A. Popov

Published in: Semiconductors | Issue 7/2020

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Abstract

The processes of crystallization of amorphous germanium films of various thicknesses and multilayer germanium/silicon nanostructures under isothermal annealing (T = 440°C) were studied. Samples were grown on glass substrates using the method of plasma-chemical deposition. The phase composition of the structures was determined from the analysis of Raman spectra. It was found that 200 nm thick germanium film almost completely crystallizes after two hours of annealing, while crystalline nuclei with a volume fraction of less than 1% only appear in a 6 mm thick germanium film. Four-hour annealing of a thin film leads to a noticeable increase in the nuclei size and the crystallinity fraction increases to 40%. Annealing of a-Ge (6 nm) nanolayers embedded in a-Si matrix under the same conditions for 2 and 4 hours does not even lead to partial crystallization, the layers remain amorphous. The influence of interfaces on the crystallization of germanium layers is discussed.
previous article First-Principle Investigation of the (001) Surface Reconstructions of GaSb and InSb Semiconductors
next article AlGaInSbAs Solid Solutions Grown on InAs Substrates by Zone Recrystallization with a Temperature Gradient

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Metadata
Title
Effect of Interfaces and Thickness on the Crystallization Kinetics of Amorphous Germanium Films
Authors
G. K. Krivyakin
V. A. Volodin
G. N. Kamaev
A. A. Popov
Publication date
01-07-2020
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 7/2020
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782620070040

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