Advertisement
Published in:
09-06-2016
Effects of annealing time on the structural and optoelectronic properties of p-type conductive transparent Cu–Cr–O films
Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2016
Log inActivate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
Abstract
Cu–Cr–O films were prepared by DC magnetron co-sputtering using Cu and Cr targets on fused silica substrates. The as-deposited Cu–Cr–O films were amorphous, semi-transparent, and insulated. After annealing at 800 °C for 30–240 min, the surface roughness and optical transmittances of the resultant films increased, but their electrical resistivity, direct optical band gap (Eg) values, and compressive residual stress decreased. The as-deposited amorphous Cu–Cr–O films crystallized to the delafossite structure of the CuCrO2 phase and showed p-type conductivity. The maximum optical transmittance of the films was as high as 80 % at a visible wavelength of 740 nm. In addition, the electrical resistivity of the films decreased from 34.72 to 14.73 Ω cm as annealing time increased from 30 to 120 min but became saturated after 240 min. These results indicate that the CuCrO2 films obtained in this work show promising optoelectronic properties under a suitable annealing time.