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Published in: Journal of Materials Science: Materials in Electronics 4/2015

01-04-2015

Effects of Y doping ions on microstructure, dielectric response, and electrical properties of Ca1−3x/2Y x Cu3Ti4O12 ceramics

Authors: Jakkree Boonlakhorn, Pinit Kidkhunthod, Bundit Putasaeng, Teerapon Yamwong, Prasit Thongbai, Santi Maensiri

Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2015

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Abstract

The effects of Y3+ doping ions on ceramic microstructure, dielectric response, and electrical properties of Ca1−3x/2Y x Cu3Ti4O12 (x = 0, 0.05, 0.10, and 0.15) ceramics prepared by a modified sol–gel method were investigated. A grain size of Ca1−3x/2Y x Cu3Ti4O12 was reduced by Y3+ ions due to a solute drag effect. Substitution of CaCu3Ti4O12 ceramics with suitable Y3+ concentration of 5 at. % can improve dielectric properties with high-dielectric permittivity of ε′ ~ 1.37 × 104 and low tanδ ~ 0.05 at 1 kHz. The results revealed that the relationship of the mean grain size and ε′ cannot be formulated. Using impedance spectroscopy analysis, the grain boundary resistance (R gb) of Ca1−3x/2Y x Cu3Ti4O12 ceramics was found to be strongly enhanced by Y3+ doping ions with x = 0.05. With further increasing x from 0.05 to 0.15, R gb decreased. While the grain resistance tended to increase with increasing Y3+ concentration (x = 0–0.15). Variation of a low-frequency tanδ value in all Ca1−3x/2Y x Cu3Ti4O12 ceramics due to the influence of Y3+ substitution was well consistent with their changes in R gb values. Non-Ohmic properties of Ca1−3x/2Y x Cu3Ti4O12 ceramics were also investigated.

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Metadata
Title
Effects of Y doping ions on microstructure, dielectric response, and electrical properties of Ca1−3x/2Y x Cu3Ti4O12 ceramics
Authors
Jakkree Boonlakhorn
Pinit Kidkhunthod
Bundit Putasaeng
Teerapon Yamwong
Prasit Thongbai
Santi Maensiri
Publication date
01-04-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 4/2015
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-2688-x

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