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Optical and Quantum Electronics

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01-01-2024

Efficiency droop free UV-C LED by introducing p-doped LQB and p-n-p-n-p doped AlGaN hole injection layer

Authors: Indrani Mazumder, Kashish Sapra, Ashok Chahun, Manish Mathew, Kuldip Singh

Published in: Optical and Quantum Electronics | Issue 1/2024

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Abstract

The photosensitive and electrical characteristics of almost efficiency-droop-free UV-C LEDs with a Mg-doped LQB and Si-doped shallow periodic Electron Injection Layer in between Mg-doped EBL and Hole Injection Layer are studied numerically in order to enhance the optical and electrical performance. SiLENSe software is used to look into the Quantum Barrier-Quantum Wells region’s IQE, energy band profiles, electron and hole concentration, and radiative recombination rates. The findings show that the proposed UV-C LED has peak IQE 140% higher than the reference one, which is generally related to the improvement of electron and hole function overlapping in QB-QWs region. The proposed modification would decrease hole barrier depth by 64% in LQB-EBL, which is what causes the 190% better hole injection from Mg-doped layer.

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Bao, X., Sun, P., Liu, S., Ye, C., Li, S., Kang, J.: Performance improvements for AlGaN-based deep ultraviolet light-emitting diodes with the p-type and thickened last quantum barrier. IEEE Photonics J. 7(1), 1–10 (2015). https://doi.org/10.1109/JPHOT.2014.2387253CrossRef

Beale, J.R.A.: Solid State Electronic Devices. 24, 3 (1973)

Chuang, S.L., Chang, C.S.: “k-p method for strained wurtzite semiconductors,” (1996)

Fan, X., et al.: Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer. Superlattices Microstruct. 88, 467–473 (2015). https://doi.org/10.1016/j.spmi.2015.10.003CrossRefADS

Hou, Y., et al.: Performance improvement of AlGaN-based ultraviolet light-emitting diodes by amending inverted-Y-shaped barriers with alternate doped Si and mg. Superlattices Microstruct. 107, 278–284 (2017). https://doi.org/10.1016/j.spmi.2017.04.017CrossRefADS

Hu, J., et al.: Enhanced performance of AlGaN-Based deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer. Nanoscale Res. Lett. 14(1) (2019). https://doi.org/10.1186/s11671-019-3201-x

Ji, Y., et al.: Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier. Opt. Lett. 38(2), 202 (2013). https://doi.org/10.1364/ol.38.000202CrossRefPubMedADS

Khan, A., Balakrishnan, K., Katona, T.: Ultraviolet light-emitting diodes based on group three nitrides. Nat. Photonics. 2, 77–84 (2008). https://doi.org/10.1038/nphoton.2007.293CrossRefADS

Kneissl, M.: A brief review of iii-nitride uv emitter technologies and their applications. Springer Ser. Mater. Sci. 227, 1–25 (2016). https://doi.org/10.1007/978-3-319-24100-5_1CrossRef

Kneissl, M., Seong, T.Y., Han, J., Amano, H.: The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat. Photonics. 13(4), 233–244 (2019). https://doi.org/10.1038/s41566-019-0359-9CrossRefADS

Kuo, Y.K., Chen, F.M., Chang, J.Y., Lin, B.C.: Polarization-matched quaternary superlattice electron blocking layer in blue InGaN light-emitting diodes. Superlattices Microstruct. 93, 221–225 (2016). https://doi.org/10.1016/j.spmi.2015.11.024CrossRefADS

Kwon, M.R., Park, T.H., Lee, T.H., Lee, B.R., Kim, T.G.: Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition. Superlattices Microstruct. 116, 215–220 (2018). https://doi.org/10.1016/j.spmi.2018.02.033CrossRefADS

Li, L., Zhang, Y., Xu, S., Bi, W., Zhang, Z.H., Kuo, H.C.: On the hole injection for III-nitride based deep ultraviolet light-emitting diodes. Mater. (Basel). 10(10), 860–862 (2017). https://doi.org/10.3390/ma10101221CrossRefADS

Lin, G.B., et al.: Effect of quantum barrier thickness in the multiple-quantum-well active region of GaInN/GaN light-emitting diodes. IEEE Photonics J. 5(4), 1600207 (2013). https://doi.org/10.1109/JPHOT.2013.2276758CrossRefADS

Liu, C., et al.: High internal quantum efficiency from AlGaN-delta-GaN quantum well at 260 nm. Opt. InfoBase Conf. Pap. Part F181–CLEO–AT 2020, 9–10 (2020). https://doi.org/10.1364/CLEO_AT.2020.AF1I.2CrossRef

Lu, L., et al.: Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells. Superlattices Microstruct. 104, 240–246 (2017). https://doi.org/10.1016/j.spmi.2017.02.035CrossRefADS

Mazumder, I., Sapra, K., Aagiwal, H., Chauhan, A.: Materials Science & Engineering B effect of graded Al composition in w-shaped quantum wells and ∆ -shaped quantum barriers on performance of AlGaN based UV-C light emitting diodes. Mater. Sci. Eng. B. 296, 116624 (2023a). https://doi.org/10.1016/j.mseb.2023.116624CrossRef

Mazumder, I., Sapra, K., Paliwal, A., Chauhan, A., Mathew, M., Singh, K.: Effects of chirped barrier thickness on InGaN/GaN and InGaN/InGaN MQW LEDs. Indian J. Phys. 0–7 (2023b). https://doi.org/10.1007/s12648-023-02677-0

Paliwal, A., Singh, K., Mathew, M.: GaN/InAlN chirped short period superlattice as strain free top cladding for blue laser diode. Semicond. Sci. Technol. 35(4) (2020). https://doi.org/10.1088/1361-6641/ab74ee

Park, S.J., et al.: Effect of mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes. Appl. Phys. Lett. 96(5), 1–4 (2010). https://doi.org/10.1063/1.3302458CrossRef

Pernot, C., et al.: Development of high efficiency 255–355 nm AlGaN-based light-emitting diodes. Phys. Status Solidi Appl. Mater. Sci. 208(7), 1594–1596 (2011). https://doi.org/10.1002/pssa.201001037CrossRefADS

Qian, Z., et al.: Analysis of the efficiency improvement of 273 nm AlGaN UV-C micro-LEDs. J. Phys. D Appl. Phys. 55(19) (2022). https://doi.org/10.1088/1361-6463/ac4e33

Shen, Y., et al.: The advantages of AlGaN-Based Ultraviolet Light-Emitting Diodes with Al Content graded AlGaN barriers. IEEE/OSA J. Disp. Technol. 11(9), 677–681 (2015). https://doi.org/10.1109/JDT.2015.2421361CrossRefADS

Si, Q., Chen, H., Li, S., Lu, S., Kang, J.: Improved characteristics of AlGaN-based deep ultraviolet light-emitting diodes with superlattice p-type doping. IEEE Photonics J. 9(3), 1–7 (2017). https://doi.org/10.1109/JPHOT.2017.2699322CrossRef

So, B., et al.: Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers. RSC Adv. 8(62), 35528–35533 (2018). https://doi.org/10.1039/C8RA06982DCrossRefPubMedPubMedCentralADS

Song, K., Mohseni, M., Taghipour, F.: Application of ultraviolet light-emitting diodes (UV-LEDs) for water disinfection: A review. Water Res. 94, 341–349 (2016). https://doi.org/10.1016/j.watres.2016.03.003CrossRefPubMed

Vurgaftman, I., Meyer, J.R.: Band parameters for nitrogen-containing semiconductors. J. Appl. Phys. 94(6), 3675–3696 (2003). https://doi.org/10.1063/1.1600519CrossRefADS

Xia, C.S., Li, Z.M.S., Crosslight, Y.S.: “Effect of last barrier on efficiency improvement of blue InGaN/GaN light-emitting diodes,” 13th Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD 2013, vol. 1, no. c, pp. 39–40, (2013). https://doi.org/10.1109/NUSOD.2013.6633113

Xing, C., et al.: Performance improvement of AlGaN-Based deep Ultraviolet Light-Emitting Diodes with Step-Like Quantum Barriers. IEEE J. Quantum Electron. 56(1) (2020). https://doi.org/10.1109/JQE.2019.2956344

Yin, X., Zhao, S.: Improving charge Carrier Transport Properties in AlGaN Deep Ultraviolet Light Emitters using Al-Content Engineered Superlattice Electron blocking layer. IEEE J. Quantum Electron. 59(1), 1–6 (2023). https://doi.org/10.1109/jqe.2023.3234991CrossRefADS

Yu, H., et al.: Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier. Opt. Express. 27 (2019). https://doi.org/10.1364/oe.27.0a1544

Zhang, J., Tansu, N.: Engineering of AlGaN-delta-GaN quantum-well gain media for mid- and deep-ultraviolet lasers. IEEE Photonics J. 5(2), 2600209 (2013). https://doi.org/10.1109/JPHOT.2013.2248705CrossRefADS

Zhang, Y., et al.: The improvement of deep-ultraviolet light-emitting diodes with gradually decreasing Al content in AlGaN electron blocking layers. Superlattices Microstruct. 82, 151–157 (2015). https://doi.org/10.1016/j.spmi.2015.02.004CrossRefADS

Zhao, H., Arif, R.A., Ee, Y.K., Tansu, N.: Self-cnsistent analysis of strain-compensated InGaN-AlGaN quantum wells for lasers and light-emitting diodes. IEEE J. Quantum Electron. 45(1), 66–78 (2009). https://doi.org/10.1109/JQE.2008.2004000CrossRefADS

Zhao, Y.K., et al.: Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection. Chin. Phys B. 24(5) (2015). https://doi.org/10.1088/1674-1056/24/5/056806

Title: Efficiency droop free UV-C LED by introducing p-doped LQB and p-n-p-n-p doped AlGaN hole injection layer
Authors: Indrani Mazumder
Kashish Sapra
Ashok Chahun
Manish Mathew
Kuldip Singh
Publication date: 01-01-2024
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 1/2024
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-023-05545-7

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