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Optical and Quantum Electronics

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01-04-2024

Electrical and optical performances investigation of planar solar blind photodetector based on IZTO/Ga₂O₃ Schottky diode via TCAD simulation

Authors: Naila Boulahia, Walid Filali, Dalila Hocine, Slimane Oussalah, Nouredine Sengouga

Published in: Optical and Quantum Electronics | Issue 4/2024

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Abstract

The development of sophisticated solar-blind photodetector devices is being motivated by the increasing need for solar-blind sensors with remarkable photosensitive qualities. This work is a modeling and simulation of electrical and optical properties of a Schottky photodetector based on gallium oxide (Ga₂O₃), one of the most promising wide-band-gap material. It focuses on the optimization of the device structure design, assumed fully transparent to visible light. In addition, analysis of electrical and optical properties of β-Ga₂O₃-based photodetector was carried out to accurately describe physical phenomenon through the semiconductor bulk. The impact of several parameters of the device on its performances is such as layer thickness, doping concentration, and electron affinity, anode work function and different cathode contact materials. Besides that, and for more understanding the real behaviors within different layers of the photodetector, diverse optical parameters were varied, for instance the light power intensity and the spectral response by changing the optical wavelength. The obtained results show a promising performance enhancement compared to previous works, for instance the photo to dark current ratio of 3 × 10⁴, the good spectral responsivity in UV light illumination [250–350 nm], in addition to the relatively high detectivity of 2.5 × 10⁹ (Jones).

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Title: Electrical and optical performances investigation of planar solar blind photodetector based on IZTO/Ga2O3 Schottky diode via TCAD simulation
Authors: Naila Boulahia
Walid Filali
Dalila Hocine
Slimane Oussalah
Nouredine Sengouga
Publication date: 01-04-2024
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 4/2024
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-023-06231-4

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