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Microsystem Technologies

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21-08-2022 | Technical Paper

Electromechanical modelling and stress analysis of RF MEMS capacitive shunt switch

Authors: Ch. Gopi Chand, Reshmi Maity, K. Srinivasa Rao, N. P. Maity, K. Girija Sravani

Published in: Microsystem Technologies | Issue 9/2022

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Abstract

This paper presents the simulation results as well as calculated results of a proposed RF MEMS shunt switch with Electro-mechanical modelling and stress gradient characteristics. The analysis is done with three membrane structures such as plane beam, incorporated with and without perforations, and non-uniform meander type beam, these are simulated in the COMSOL Multi-physics tool. The various model analysis are carried out for different values of residual stress gradients such as different structures, materials, and beam thickness. The analysis are characterized that the higher values of stress gradient are not desirable for switching action. By analyzing all the results we have observed that the stress analysis for the non-uniform meandered type switch obtained maximum stress of 35.6 MPa, and center deflection of 0.06 MPa/μm, the deformations of the beam which is the least among the considered switches.

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Title: Electromechanical modelling and stress analysis of RF MEMS capacitive shunt switch
Authors: Ch. Gopi Chand
Reshmi Maity
K. Srinivasa Rao
N. P. Maity
K. Girija Sravani
Publication date: 21-08-2022
Publisher: Springer Berlin Heidelberg
Published in: Microsystem Technologies / Issue 9/2022
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI: https://doi.org/10.1007/s00542-022-05367-9

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