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2015 | OriginalPaper | Chapter

3. Electromigration-Induced Plasticity in Cu Interconnects: The Length Scale Dependence

Author : Arief Suriadi Budiman

Published in: Probing Crystal Plasticity at the Nanoscales

Publisher: Springer Singapore

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Abstract

The early stage of electromigration in Cu interconnects, before the visible structural damage is discussed in this chapter. It is shown, through the μSXRD technique that plastic deformation occurs on the early stage of electromigration. The behavior of the deformation depends on the interconnect width (the crystal grains are mainly rotating in the narrow lines, while crystal bending is observed in the wider lines). Moreover, in the case of wide interconnects, the direction of bending axis is very close to the direction of electrical current.

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previous chapter Synchrotron White-Beam X-ray Microdiffraction at the Advanced Light Source, Berkeley Lab
next chapter Electromigration-Induced Plasticity in Cu Interconnects: The Texture Dependence
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Metadata
Title
Electromigration-Induced Plasticity in Cu Interconnects: The Length Scale Dependence
Author
Arief Suriadi Budiman
Copyright Year
2015
Publisher
Springer Singapore
Book
Probing Crystal Plasticity at the Nanoscales

Print ISBN: 978-981-287-334-7

Electronic ISBN: 978-981-287-335-4

Copyright Year: 2015

DOI
https://doi.org/10.1007/978-981-287-335-4_3

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