Electron beam writing of epoxy based sol–gel materials

We report the use of an epoxy based hybrid sol–gel material as negative resist for electron beam lithography (EBL). The matrix has been prepared starting from 3-glycidoxypropyltrimethoxysilane as specific organic–inorganic precursor and the synthesis has been strictly controlled in order to preserve the epoxy ring and to obtain a proper inorganic cross-linking degree. The film has been exposed to an electron beam, inducing the polymerization of the organic part and generating the film hardening. Preliminary results of a resolution test on the synthesized epoxy based sol–gel material, performed with electron beam lithography, are presented. Structures below 300 nm were achieved. The direct nanopatterning of this hybrid sol–gel system simplify the nanofabrication process and can be exploited in the realization of photonic devices. A demonstration has been carried out doping the hybrid films with commercial Rhodamine 6G and reproducing an already tested laser structure.