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2018 | OriginalPaper | Chapter

8. Electronic Behavior of Nanocrystalline Silicon Thin Film Transistor

Authors : Prachi Sharma, Navneet Gupta

Published in: Nanomaterials and Their Applications

Publisher: Springer Singapore

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Abstract

Thin film transistor (TFT) plays an important role for the fabrication of highly functional active matrix backplanes for large area display applications such as organic light emitting diodes (OLEDs). Nanocrystalline silicon (nc-Si) has recently achieved lot of interest over existing hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) due to its superior properties which makes it suitable channel material for the fabrication of TFTs. In present work, the physical insight into the nc-Si TFT device characteristics and device non idealities is reported which can provide important step for the production of high performance large area display devices.

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Title: Electronic Behavior of Nanocrystalline Silicon Thin Film Transistor
Authors: Prachi Sharma
Navneet Gupta
Publisher: Springer Singapore
Book: Nanomaterials and Their Applications
Print ISBN: 978-981-10-6213-1

Electronic ISBN: 978-981-10-6214-8

Copyright Year: 2018
DOI: https://doi.org/10.1007/978-981-10-6214-8_8

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