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Published in: Optical and Quantum Electronics 4/2023

01-04-2023

Enhancing the parameters of ZnO/CdZnS thin film photodetector by thermal annealing

Authors: Kahtan A. Mohammed, Hussein A. Alshamarti, Hadeel A. Jameel, Zahraa Falah Khudair, Rahman S. Zabibah, Kuldeep K. Saxena

Published in: Optical and Quantum Electronics | Issue 4/2023

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Abstract

This work aims to manufacture photodetectors from semiconducting bilayer materials of zinc oxide nanorods and coated with a thin layer of CdZnS by chemical bath deposition method. The effect of annealing time on the optical and electrical properties of the prepared devices and on the parameters of the devices was also studied. The prepared films were thermally treated by annealing at a temperature of 200 °C for several times for the purpose of comparison. The annealing times were 15, 30, 35, 60 min, respectively, by means of a vacuum furnace. The effect of the annealing time was noticeable and obvious on the optical and electrical properties of the manufactured photodetectors.

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Metadata
Title
Enhancing the parameters of ZnO/CdZnS thin film photodetector by thermal annealing
Authors
Kahtan A. Mohammed
Hussein A. Alshamarti
Hadeel A. Jameel
Zahraa Falah Khudair
Rahman S. Zabibah
Kuldeep K. Saxena
Publication date
01-04-2023
Publisher
Springer US
Published in
Optical and Quantum Electronics / Issue 4/2023
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-023-04642-x

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