1984 | OriginalPaper | Chapter
Evaluation of Metal Interaction by Color Display SIMS Technique
Authors : Y. Mashiko, K. Tsutsumi, H. Koyama, S. Kawazu
Published in: Secondary Ion Mass Spectrometry SIMS IV
Publisher: Springer Berlin Heidelberg
Included in: Professional Book Archive
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The SIMS method is available to obtain the one-dimensional depth profile of elements and two-dimensional map of elements. However, metals used for manufacturing semiconductor devices can interact three-dimensionally to cause complex distribution of elements. And it is necessary to know the exact distribution of elements for obtaining highly reliable devices. This report describes the results of investigation on metal interaction observed by color display SIMS technique.