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01-10-2006 | Physics of Semiconductor Devices

Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs

Authors: S. A. Blokhin, A. V. Sakharov, N. A. Maleev, A. G. Kuz’menkov, I. I. Novikov, N. Yu. Gordeev, Yu. M. Shernyakov, M. V. Maximov, V. M. Ustinov, A. R. Kovsh, S. Mikhrin, N. N. Ledentsov, G. Lee, J. Y. Chi

Published in: Semiconductors | Issue 10/2006

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Title: Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs
Authors: S. A. Blokhin
A. V. Sakharov
N. A. Maleev
A. G. Kuz’menkov
I. I. Novikov
N. Yu. Gordeev
Yu. M. Shernyakov
M. V. Maximov
V. M. Ustinov
A. R. Kovsh
S. Mikhrin
N. N. Ledentsov
G. Lee
J. Y. Chi
Publication date: 01-10-2006
Publisher: Nauka/Interperiodica
Published in: Semiconductors / Issue 10/2006
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI: https://doi.org/10.1134/S1063782606100198

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