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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 12/2008

01-12-2008

Fabrication and characteristics of La, Cd and Sn doped BST thin films by sol–gel method

Authors: Wencheng Hu, Chuanren Yang, Wanli Zhang

Published in: Journal of Materials Science: Materials in Electronics | Issue 12/2008

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Abstract

Ba1−x Sr x TiO3 (BST) thin films doped with La, Cd and Sn were prepared by sol–gel method on the Pt/Ti/SiO2/Si substrate. X-ray diffraction analysis and atomic force microscopy showed that dopant La and Cd causes decreased grain size of BST thin films obviously, and Sn-doped BST thin films was similar to BST films in grain size. La and Cd doped decreased the tunability of BST thin films and Sn doped increased it, which may be explained by stress, electronegativity and oxygen vacancies factors. All the doped BST thin films improved the leakage current characteristic.
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Metadata
Title
Fabrication and characteristics of La, Cd and Sn doped BST thin films by sol–gel method
Authors
Wencheng Hu
Chuanren Yang
Wanli Zhang
Publication date
01-12-2008
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 12/2008
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-007-9527-7

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