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Published in: Journal of Materials Science: Materials in Electronics 17/2022

20-05-2022

Fabrication ternary dual Z-scheme InVO4/Bi2S3/g-C3N4 heterojunction photocatalyst for the highly efficient visible-light-driven degradation of Reactive Blue 19

Authors: Yuzhen Li, Siyang Tan, Yachu Meng, Yunsheng Xia, Lizhen Gao, Wenjun Chen

Published in: Journal of Materials Science: Materials in Electronics | Issue 17/2022

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Abstract

A novel visible-light-driven InVO4/Bi2S3/g-C3N4 (VBSCN) nanocomposite photocatalyst was successfully synthesized by a wet-impregnation method. The phase, morphology, chemical composition, microstructure, and optical properties of the prepared pure g-C3N4 and ternary InVO4/Bi2S3/g-C3N4 heterojunctions were measured in detail by various characterization techniques, including powder XRD, FT-IR, TEM, SEM, BET, UV–Vis DRS, PL, the photocurrent response, and EIS analyses. The fabricated nanocomposites Bi2S3/g-C3N4 with the InVO4 doping mass ratio of 5% exhibited superior photocatalytic degradation of Reactive blue 19 dye under visible light irradiation. Furthermore, O2 was identified as the main active species by free radical trapping. This efficient catalysis was benefited from the doping of InVO4, which reduced the wide intrinsic band gap and improved the absorption and utilization ability of visible light. Meanwhile, a dual Z-scheme heterostructure interface was constructed to realize the rapid separation of photogenerated electron–hole pairs. This investigation may provide referential significance for the exploration and fabrication of new and efficient g-C3N4-based heterostructure.

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Metadata
Title
Fabrication ternary dual Z-scheme InVO4/Bi2S3/g-C3N4 heterojunction photocatalyst for the highly efficient visible-light-driven degradation of Reactive Blue 19
Authors
Yuzhen Li
Siyang Tan
Yachu Meng
Yunsheng Xia
Lizhen Gao
Wenjun Chen
Publication date
20-05-2022
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 17/2022
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-022-08320-8

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