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Published in:
11-01-2021
Ferroelectric and dielectric properties of BF-PT/LNO thin films on different substrates
Published in: Journal of Materials Science: Materials in Electronics | Issue 3/2021
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Abstract
Ferroelectric 0.7BiFeO3–0.3PbTiO3 (BF-PT) thin films were prepared by the sol–gel method on Pt/Ti/SiO2/Si, stainless steel (SS) and Ti substrates, respectively, with LaNiO3 (LNO) buffer layers. The performance of the BF-PT films on SS is significantly better than that on the Ti substrates and is comparable to the films on the Pt/Ti/SiO2/Si substrates. The BF-PT films on SS substrates have the good crystallinity with a pure perovskite structure. Moreover, the dielectric loss and remnant polarization (Pr) of BF-PT on SS are of 4.48% (at the frequency of 103 Hz) and 28.9 μC/cm2, respectively, revealing good dielectric and ferroelectric properties. It is found that BF-PT deposited on SS has the good fatigue resistance relative to the films on Ti substrates. The reduction of polarization is of about 22% after the electrical switching of 1.33 × 108 cycles. Experiments show that BF-PT thin films deposited on SS substrates exhibit superior ferroelectric, dielectric, and fatigue resistance properties.