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2017 | OriginalPaper | Chapter

12. Fluorine-Implanted Enhancement-Mode Transistors

Author : Kevin J. Chen

Published in: Power GaN Devices

Publisher: Springer International Publishing

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Abstract

GaN-based heterojunction devices, in the form of high electron mobility transistors (HEMTs) and metal–insulator–semiconductor HEMTs (MIS-HEMTs), are capable of delivering superior performance in high-frequency power amplifiers and high-voltage power switches. Conventional Ga-face C-plane GaN-based heterostructures offer record-high 2DEG (two-dimensional electron gas) density without any intentional doping because of the strong intrinsic charge polarization. High-density 2DEG channel inevitably results in depletion-mode (D-mode) GaN transistors with negative threshold voltage (V _th). However, enhancement-mode (E-mode) HEMTs are highly desirable for their inherent fail-safe operation and simple circuit configurations. The key to a feasible normally off HEMT technology is a post-epitaxy threshold voltage control technique that allows localized conversion from D-mode to E-mode or vice versa, since a high-performance E-mode HEMT requires a gate-controlled E-mode channel and D-mode regions (for low access resistance). Gate recess, p-type cap (AlGaN or GaN), and fluorine plasma ion implantation are the three commonly used approaches to fabricating normally off HEMTs. In this chapter, a comprehensive discussion on the underlying physical mechanisms of the fluorine implantation is presented, including atomistic simulation and experimental studies. Further development of the F-implant technique and its integration with other advanced techniques such as gate recess and AlN passivation is described. Finally, the robustness of the F-implant technique is further illustrated with the demonstration of various mixed-signal circuits fully integrated with GaN power devices.

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previous chapter Gate Injection Transistors: E-mode Operation and Conductivity Modulation

next chapter Drift Effects in GaN High-Voltage Power Transistors

Cai Y, Zhou Y, Chen KJ, Lau KM (2005) High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment. IEEE Electron Device Lett 26:435

Cai Y, Zhou Y, Lau KM, Chen KJ (2006) Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: from depletion mode to enhancemend mode. IEEE Trans Electron Devices 53:2207

Jia S, Cai Y, Wang D, Zhang B, Lau KM, Chen KJ (2006) Enhancement-mode AlGaN/GaN HEMTs on silicon substrate. IEEE TransElectron Devices 53:1477

Yuan L, Wang MJ, Chen KJ (2008) Fluorine plasma ion implantation in AlGaN/GaN heterostructures: a molecular dynamics simulation study. Appl Phys Lett 92:102109

Segawa S, Kurihara M, Nakano N, Makabe T (1999) Dependence of driving frequency on capacitively coupled plasma in CF4. Jpn J Appl Phys 38:4416

Klein PB, Binari SC, Ikossi K, Wickenden AE, Koleske DD, Henry RL (2001) Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy. Appl Phys Lett 79:21

Yi C, Wang R, Huang W, Tang WC-W, Lau KM, Chen KJ (2007) Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment. Technical digest. IEEE International Electron Device Meeting, p. 389

Robison RR, Law ME (2002) Fluorine diffusion: models and experiments. Technical digest. IEEE International Electron Device Meeting, p. 883

Hayafuji N, Yamamoto Y, Ishida T, Sato K (1996) Degradation mechanism of the AlInAs/GaInAs high electron mobility transistor due to fluorine incorporation. Appl Phys Lett 69:4075

10.

Ma C, Chen H, Zhou C, Huang S, Yuan L, Roberts J, Chen KJ (2010) Reliability of enhancement-mode AlGaN/GaN HEMTs under ON-state gate overdrive. Technical digest. IEEE International Electron Device Meeting, p. 476

11.

Yuan L, Wang M, Chen KJ (2008) Atomistic modeling of fluorine implantation and diffusion in III-nitride semiconductors.Technical digest. IEEE International Electron Device Meeting, p. 543

12.

Wang MJ, Yuan L, Cheng CC, Beling CD, Chen KJ (2009) Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy. Appl Phys Lett 94:061910

13.

Li BK, Chen KJ, Lau KM, Ge WK, Wang JN (2008) Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity. Phys Stat Sol C 5:1892

14.

Khan MA, Hu X, Tarakji A, Simin G, Yang J, Gaska R, Shur MS (2000) AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates. Appl Phys Lett 77:1339

15.

Chen KJ, Zhou C (2011) Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology. Stat Sol A 208:434

16.

Wang R, Cai Y, Tang C-W, Lau KM, Chen KJ (2006) Enhancement-mode Si3N4/AlGaN/GaN MISHFETs. IEEE Electron Device Lett 27:793

17.

Huang S, Jiang Q, Yang S, Zhou C, Chen KJ (2012) Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film. IEEE Electron Device Lett 33:516

18.

Tang Z, Jiang Q, Lu Y, Huang S, Yang S, Tang X, Chen KJ (2013) 600-V normally-off SiNx/AlGaN/GaN MIS-HEMT with large gate swing and low current collapse. IEEE Electron Device Lett 34:1373

19.

Yang S, Tang Z, Wong K-Y, Lin Y-S, Liu C, Lu Y, Huang S, Chen KJ (2013) High-quality interface in Al2O3/GaN/AlGaN/GaN MIS structures with in situ pre-gate plasma nitridation. IEEE Electron Device Lett 34:1497

20.

Lu Y, Yang S, Jiang Q, Tang Z, Li B, Chen KJ (2013) Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs. Phys Stat Sol C 10:1397

21.

Chu RM, Brown D, Zehnder D, Chen X, Williams A, Li R, Chen M, Newell S, Boutros K (2012) Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200 °C. Proceeding of 24th international symposium on power semiconductor devices and ICs, p. 237

22.

Yang S, Liu S, Liu C, Chen KJ (2014) Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: underlying mechanisms and optimization schemes. Technical digest. IEEE International Electron Device Meeting, p. 389

23.

Liu C, Yang S, Liu S, Tang Z, Wang H, Jiang Q, Chen KJ (2015) Thermally stable enhancement-mode GaN metal-insulator-semiconductor high-electron-mobility transistor with partially recessed fluorine-implanted barrier. IEEE Electron Device Lett 36:318

24.

Liu S, Yang S, Tang Z, Jiang Q, Liu C, Wang M, Chen KJ (2014) Al2O3/AlN/GaN MOS-channel-HEMTs with an AlN interfacial layer. IEEE Electron Device Lett 35:723

25.

Wong K-Y, Chen W, Liu X, Zhou C, Chen KJ (2010) GaN smart power IC technology. Phys Stat Sol B 247:1732

26.

Chen KJ, Kwan AMH, Jiang Q (2014) Technology for III-N heterogeneous mixed-signal electronics. Phys Stat Sol A 211:769

27.

Chen W, Wong KY, Huang W, Chen KJ (2008) High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors. Appl Phys Lett 92:253501

28.

Chen W, Wong KY, Chen KJ (2009) Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally-off HEMT. IEEE Electron Device Lett 30:430

29.

Cai Y, Cheng Z, Yang Z, Tang WC-W, Lau KM, Chen KJ (2006) Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment. IEEE Trans Electron Devices 53:2223

30.

Bahat-Treidel E, Hilt O, Zhytnytska R, Wentzel A, Meliani C, Würfl J, Tränkle G (2012) Fast-switching GaN-based lateral power schottky barrier diodes with low onset voltage and strong reverse blocking. IEEE Electron Device Lett 33:357

31.

Cai Y, Cheng Z, Yang Z, Tang WC-W, Lau KM, Chen KJ (2007) High temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits. IEEE Electron Device Lett 28:328

32.

Wong K-Y, Chen WJ, Chen KJ (2010) Integrated voltage reference generator for GaN smart power chip technology. IEEE Trans Electron Devices 57:952

33.

Liu X, Chen KJ (2011) GaN Single-polarity power supply bootstrapped comparator for high temperature electronics. IEEE Electron Device Lett 32:27

34.

Kwan AMH, Liu X, Chen KJ (2012) Integrated gate-protected HEMTs and mixed-signal functional blocks for GaN smart power ICs. Technical digest. IEEE International Electron Device Meeting, p. 7.3.1

35.

Kwan AM, Guan Y, Liu X, Chen KJ (2014) A highly linear integrated temperature sensor on a GaN smart power IC platform. IEEE Trans Electron Devices 61:2970

36.

Jiang Q, Tang Z, Liu C, Lu Y, Chen KJ (2014) Substrate-coupled cross-talk effects on an AlGaN/GaN-on-Si smart power IC platform. IEEE Trans Electron Devices 61:762

37.

Wang H, Kwan AM, Jiang Q, Chen KJ (2015) A GaN pulse width modulation integrated circuit for GaN power converters. IEEE Trans Electron Devices 62:1143

Title: Fluorine-Implanted Enhancement-Mode Transistors
Author: Kevin J. Chen
Publisher: Springer International Publishing
Book: Power GaN Devices
Print ISBN: 978-3-319-43197-0

Electronic ISBN: 978-3-319-43199-4

Copyright Year: 2017
DOI: https://doi.org/10.1007/978-3-319-43199-4_12