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2017 | OriginalPaper | Chapter

11. Gate Injection Transistors: E-mode Operation and Conductivity Modulation

Author : Tetsuzo Ueda

Published in: Power GaN Devices

Publisher: Springer International Publishing

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Abstract

This chapter describes an enhancement-mode (E-mode) GaN transistor named as Gate Injection Transistor (GIT) and various technologies to improve the performances. The operation principle of the GIT as well as its state-of-the-art DC and switching performances is described after summarizing reported E-mode GaN power transistors. Status of the reliability including Current collapse is summarized, followed by the results of the application of the GIT to practical power switching circuits targeting at high efficiencies. Future technologies to improve the performances and to extract the potential are also described.

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previous chapter Cascode Gallium Nitride HEMTs on Silicon: Structure, Performance, Manufacturing, and Reliability

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Morita T, Handa H, Ujita S, Ishida M, Ueda T (2014) 99.3 % Efficiency of boost-up converter for totem-pole bridgeless PFC using GaN gate injection transistors. PCIM Europe, Nuremberg, Germany, May 2014

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Morita T, Tamura S, Anda Y, Ishida M, Uemoto Y, Ueda T, Tanaka T, Ueda D (2011) 99.3 % Efficiency of three-phase inverter using GaN-based gate injection transistors. In: Proceedings of 26th IEEE applied power electronics conference and exposition (APEC 2011), Fort Worth, USA, p 481, March 2011

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Ujita S, Kinoshita Y, Umeda H, Morita T, Tamura S, Ishida M, Ueda T (2014) A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies. International symposium on power semiconductor devices and ICs (ISPSD), Wikoloa, USA, B1L-A-1, June 2014

17.

Umeda H, Kinoshita Y, Ujita S, Morita T, Tamura S, Ishida M, Ueda T (2014) Highly efficient low-voltage DC-DC converter at 2-5 MHz with high operating current using GaN gate injection transistors. PCIM Europe, Nuremberg, Germany, p 45, May 2014

Title: Gate Injection Transistors: E-mode Operation and Conductivity Modulation
Author: Tetsuzo Ueda
Publisher: Springer International Publishing
Book: Power GaN Devices
Print ISBN: 978-3-319-43197-0

Electronic ISBN: 978-3-319-43199-4

Copyright Year: 2017
DOI: https://doi.org/10.1007/978-3-319-43199-4_11