10. Cascode Gallium Nitride HEMTs on Silicon: Structure, Performance, Manufacturing, and Reliability

High-voltage GaN is redefining power conversion, providing cost-competitive and easy-to-embed solutions that reduce costly energy loss by more than 50 %, shrink size and simplify the design and manufacturing of power supplies (for servers, telecom, industrial, gaming, and adapters), PV inverters, motor drives and EV/HEV inverters/converters. Transphorm has established the next power conversion platform—demonstrating breakthrough performance by introducing the world’s first 600 and 650 V GaN products with its EZ-GaN^™ platform, using a cascode high-voltage GaN HEMT configuration. Following successful completion of JEDEC qualification as well as establishment of a high-voltage lifetime of >10 M hours, cascode high-voltage GaN HEMT on silicon switches is now a reality. The ability to produce large-area (6 in.) GaN-on-Si wafers and manufacture them in existing high-volume Si foundries has also made high-voltage GaN commercially attractive.