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2017 | OriginalPaper | Chapter

9. Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities

Authors : Isabella Rossetto, Davide Bisi, Carlo de Santi, Antonio Stocco, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Published in: Power GaN Devices

Publisher: Springer International Publishing

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Abstract

This chapter describes the properties of the performance-limiting defects in GaN-based transistors. The first part of the chapter summarizes the properties of the most common defects in GaN, by describing a database of defects that has been prepared by our group based on a collection of more than 80 papers on the topic. The second part of the chapter describes the results of our most recent experiments on the impact of common native defects (vacancies, surface states, etc.) and impurities (such as Fe and C) on the dynamic performance of GaN HEMTs. Information on the correlation between epitaxial structure, process quality, and dynamic performance is given in the text.

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Title: Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities
Authors: Isabella Rossetto
Davide Bisi
Carlo de Santi
Antonio Stocco
Gaudenzio Meneghesso
Enrico Zanoni
Matteo Meneghini
Publisher: Springer International Publishing
Book: Power GaN Devices
Print ISBN: 978-3-319-43197-0

Electronic ISBN: 978-3-319-43199-4

Copyright Year: 2017
DOI: https://doi.org/10.1007/978-3-319-43199-4_9