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Published in:
Properties and Advantages of Gallium Nitride Read chapter Read first chapter

2017 | OriginalPaper | Chapter

8. Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping

Authors : Gilberto Curatola, Giovanni Verzellesi

Published in: Power GaN Devices

Publisher: Springer International Publishing

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Abstract

We describe an approach to modelling of power GaN HEMTs, aimed at full-system optimization through concurrent simulation of device, package, and application. We believe this “virtual prototyping” approach is an effective means to link fundamental understanding of the device properties to circuit- and system-level performance. Results are specifically presented from detailed simulations and comparison with experiments for both normally-on insulated-gate GaN HEMTs and normally-off pGaN devices in real switching applications.

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previous chapter Deep-Level Characterization: Electrical and Optical Methods
next chapter Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities
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Metadata
Title
Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping
Authors
Gilberto Curatola
Giovanni Verzellesi
Copyright Year
2017
Book
Power GaN Devices

Print ISBN: 978-3-319-43197-0

Electronic ISBN: 978-3-319-43199-4

Copyright Year: 2017

DOI
https://doi.org/10.1007/978-3-319-43199-4_8