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2017 | OriginalPaper | Chapter

7. Deep-Level Characterization: Electrical and Optical Methods

Authors : Andrew M. Armstrong, Robert J. Kaplar

Published in: Power GaN Devices

Publisher: Springer International Publishing

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Abstract

The most direct method for measuring the influence of defects on HEMTs is to examine how the I _ds changes under a given bias condition due to thermally or optically stimulated transitions of electrons and holes into or out of deep levels. The primary effect of changing the occupancy of a deep-level defect on HEMT operation is the formation of a local space-charge that acts like a floating gate. Filling a defect with excess electrons creates a local negative potential that acts to partially pinch-off the channel and reduce I _ds. Conversely, electron emission from a defect state makes the local potential more positive and increases I _ds. Thus, defect states act to self-bias the HEMT and lead to instability in device operation as the occupancy of deep levels changes under dynamic operating conditions, such as switching or self-heating.

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Title: Deep-Level Characterization: Electrical and Optical Methods
Authors: Andrew M. Armstrong
Robert J. Kaplar
Publisher: Springer International Publishing
Book: Power GaN Devices
Print ISBN: 978-3-319-43197-0

Electronic ISBN: 978-3-319-43199-4

Copyright Year: 2017
DOI: https://doi.org/10.1007/978-3-319-43199-4_7