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2017 | OriginalPaper | Chapter

6. GaN-Based Nanowire Transistors

Authors : Elison Matioli, Bin Lu, Daniel Piedra, Tomás Palacios

Published in: Power GaN Devices

Publisher: Springer International Publishing

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Abstract

The outstanding electronic properties of GaN semiconductors, such as large breakdown voltage, high critical electric field, high electron mobility and saturation velocity, high-temperature operation, make them an ideal material for power switches, converters, and RF power amplifiers.

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Title: GaN-Based Nanowire Transistors
Authors: Elison Matioli
Bin Lu
Daniel Piedra
Tomás Palacios
Publisher: Springer International Publishing
Book: Power GaN Devices
Print ISBN: 978-3-319-43197-0

Electronic ISBN: 978-3-319-43199-4

Copyright Year: 2017
DOI: https://doi.org/10.1007/978-3-319-43199-4_6