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2017 | OriginalPaper | Buchkapitel

11. Gate Injection Transistors: E-mode Operation and Conductivity Modulation

verfasst von : Tetsuzo Ueda

Erschienen in: Power GaN Devices

Verlag: Springer International Publishing

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Abstract

This chapter describes an enhancement-mode (E-mode) GaN transistor named as Gate Injection Transistor (GIT) and various technologies to improve the performances. The operation principle of the GIT as well as its state-of-the-art DC and switching performances is described after summarizing reported E-mode GaN power transistors. Status of the reliability including Current collapse is summarized, followed by the results of the application of the GIT to practical power switching circuits targeting at high efficiencies. Future technologies to improve the performances and to extract the potential are also described.

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Vorheriges Kapitel Cascode Gallium Nitride HEMTs on Silicon: Structure, Performance, Manufacturing, and Reliability

Nächstes Kapitel Fluorine-Implanted Enhancement-Mode Transistors

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Meneghini M, Scamperle M, Pavesi M, Manfredi M, Ueda T, Ishida H, Tanaka T, Ueda D, Meneghesso G, Zanoni E (2010) Electron and hole-related luminescence processes in gate injection transistors. Appl Phys Lett 97:033506

Ishida M, Ueda T, Tanaka T, Ueda D (2013) GaN on Si technologies for power switching Devices. IEEE Trans Electron Device 60:3053

Ueda T, Ishida M, Tanaka T, Ueda D (2014) GaN transistors on Si for switching and high-frequency applications. Jpn J Appl Phys 53:100214

10.

Morita T, Handa H, Ujita S, Ishida M, Ueda T (2014) 99.3 % Efficiency of boost-up converter for totem-pole bridgeless PFC using GaN gate injection transistors. PCIM Europe, Nuremberg, Germany, May 2014

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Tanaka K, Ishida M, Ueda T, TanakaT (2013) Effects of deep trapping states at high temperatures on transient performance of AlGaN/GaN heterostructure field-effect transistors. Jpn J Appl Phys 52:04CF07

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13.

Morita T, Tamura S, Anda Y, Ishida M, Uemoto Y, Ueda T, Tanaka T, Ueda D (2011) 99.3 % Efficiency of three-phase inverter using GaN-based gate injection transistors. In: Proceedings of 26th IEEE applied power electronics conference and exposition (APEC 2011), Fort Worth, USA, p 481, March 2011

14.

Kajitani R, Tanaka K, Ogawa M, Ishida H, Ishida M, Ueda T (2014) A novel high-current density GaN-based normally-off transistor with tensile strained quaternary InAlGaN barrier. Extended abstract of international conference on solid state devices and materials, Tsukuba, Japan, E-3-2, September 2014

15.

Uemoto Y, Morita T, Ikoshi A, Umeda H, Matsuo H, Shimizu J, Hikita M, Yanagihara M, Ueda T, Tanaka T, Ueda D (2009) GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate. IEEE IEDM technical digest, Baltimore, USA, p 165, Dec 2009

16.

Ujita S, Kinoshita Y, Umeda H, Morita T, Tamura S, Ishida M, Ueda T (2014) A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies. International symposium on power semiconductor devices and ICs (ISPSD), Wikoloa, USA, B1L-A-1, June 2014

17.

Umeda H, Kinoshita Y, Ujita S, Morita T, Tamura S, Ishida M, Ueda T (2014) Highly efficient low-voltage DC-DC converter at 2-5 MHz with high operating current using GaN gate injection transistors. PCIM Europe, Nuremberg, Germany, p 45, May 2014

Titel: Gate Injection Transistors: E-mode Operation and Conductivity Modulation
verfasst von: Tetsuzo Ueda
Verlag: Springer International Publishing
Buch: Power GaN Devices
Print ISBN: 978-3-319-43197-0

Electronic ISBN: 978-3-319-43199-4

Copyright-Jahr: 2017
DOI: https://doi.org/10.1007/978-3-319-43199-4_11