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Microsystem Technologies
Published in: Microsystem Technologies 12/2019

09-05-2019 | Technical Paper

Ge4Sb1Te5 device case study for NVRAM applications

Authors: N. Shylashree, B. G. Sangeetha, Adithya Thonse, Vijay Nath

Published in: Microsystem Technologies | Issue 12/2019

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Abstract

In this paper, the characterization of Ge4Sb1Te5 thin film device with 110 nm and 140 nm thickness was conducted. Fabrication was done using physical vapor deposition technique. The switching from amorphous to crystalline state is studied using electrical studies, whereas the Raman studies explains the structure of the film. The switching of the device is analyzed by current–voltage, resistance–voltage characteristics. Device endurance verifies this as an appropriate choice in the field of memory applications.
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Literature
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Metadata
Title
Ge4Sb1Te5 device case study for NVRAM applications
Authors
N. Shylashree
B. G. Sangeetha
Adithya Thonse
Vijay Nath
Publication date
09-05-2019
Publisher
Springer Berlin Heidelberg
Published in
Microsystem Technologies / Issue 12/2019
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-019-04451-x

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