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Introduction to High-k Gate Stacks Read chapter Read first chapter

2013 | OriginalPaper | Chapter

3. Hafnium-Based Gate Dielectric Materials

Author : Akira Nishiyama

Published in: High Permittivity Gate Dielectric Materials

Publisher: Springer Berlin Heidelberg

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Abstract

In this chapter, we focus on hafnium-based gate dielectrics. HfO2 is regarded as the most promising material for the high–k gate dielectrics owing to its large dielectric constant and large band-gap energy. In the first part of this chapter, these characteristics are addressed in a comparison with SiO2 and other high-k materials. Thermal stability is a major issue for the application of high-k materials to MOSFETs in LSIs. Although HfO2 satisfies this requirement, severer process conditions may cause problems even with this material. Suppression of these issues is also addressed in the second part of this chapter. In order to enhance the characteristics of HfO2, transformation of the monoclinic phase to the tetragonal and the cubic phases with larger dielectric constant has been pursued recently. We mention the issue in the last part of this chapter.

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previous chapter MOSFET: Basics, Characteristics, and Characterization
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This figure was formed using data in Ref. [78]
Metadata
Title
Hafnium-Based Gate Dielectric Materials
Author
Akira Nishiyama
Copyright Year
2013
Publisher
Springer Berlin Heidelberg
Book
High Permittivity Gate Dielectric Materials

Print ISBN: 978-3-642-36534-8

Electronic ISBN: 978-3-642-36535-5

Copyright Year: 2013

DOI
https://doi.org/10.1007/978-3-642-36535-5_3