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Microsystem Technologies
Published in: Microsystem Technologies 5/2019

24-05-2017 | Technical Paper

Hafnium oxide based cylindrical junctionless double surrounding gate (CJLDSG) MOSFET for high speed, high frequency digital and analog applications

Authors: Sonam Rewari, Vandana Nath, Subhasis Haldar, S. S. Deswal, R. S. Gupta

Published in: Microsystem Technologies | Issue 5/2019

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Abstract

In this paper Hafnium Oxide (HfO2) based cylindrical Junctionless Double Surrounding Gate (CJLDSG) MOSFET has been analyzed for various metrics of device performance. HfO2 based CJLDSG MOSFET has been compared with HfO2 based Cylindrical Junctionless Surrounding Gate (CJLSG) MOSFET and Silicon Oxide (SiO2) based CJLDSG MOSFET and CJLSG MOSFET. It has been observed that HfO2 based CJLDSG MOSFET shows improved analog performance in terms of higher drain current, higher transconductance, higher output conductance (gd), higher Transconductance Generation Factor (TGF), higher Early Voltage (VEA), Maximum Transducer Power Gain (MTPG), Current Gain and Subthreshold Slope (SS) close to 60 mV/decade. HfO2 based CJLDSG MOSFET shows lower channel resistance. The Cut Off Frequency (fT) and Frequency Transconductance Product (FTP) of HfO2 based CJLDSG MOSFET is maximum among all and it also offers highest frequency of operation. It also shows higher Ion/Ioff ratio. Thus, making HfO2 based CJLDSG MOSFET an ultimate device for high speed, high frequency digital and analog applications.
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next article Novel design to improve band to band tunneling and gate induced drain leakages (GIDL) in cylindrical gate all around (GAA) MOSFET

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Metadata
Title
Hafnium oxide based cylindrical junctionless double surrounding gate (CJLDSG) MOSFET for high speed, high frequency digital and analog applications
Authors
Sonam Rewari
Vandana Nath
Subhasis Haldar
S. S. Deswal
R. S. Gupta
Publication date
24-05-2017
Publisher
Springer Berlin Heidelberg
Published in
Microsystem Technologies / Issue 5/2019
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-017-3436-3

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