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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 18/2021

20-08-2021

High-efficiency black silicon tunnel oxide passivated contact solar cells achieved by adjusting the boron diffusion process

Authors: Cui Liu, Jiahui Xu, Zhen Zhang, Zhifeng Liu, Xiao Yuan, Hongbo Li

Published in: Journal of Materials Science: Materials in Electronics | Issue 18/2021

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Abstract

Optical loss is still a tough problem in photovoltaic; it considerably restrains the conversion efficiency of tunnel oxide passivated contact (TOPCon) solar cells. Black silicon is widely used to enhance light absorption by its light-trapping structure. Paradoxically, the structure simultaneously brings severe carrier recombination and rarely increases efficiency. In our work, we combined the black silicon with TOPCon solar cell and fabricated high-efficiency TOPCon solar cells with nanopore pyramid structure emitter prepared by reactive ion etching. We systematically analyzed the boron doping, emitter passivation, and cell performance. By excellent passivation effect provided by Al2O3/SiNX stacked layers and artificially adjusting boron diffusion process, we successfully fabricated the large-scale (158.75 × 158.75 mm2) bifacial TOPCon solar cells with short-circuit current density of 40.69 mA/cm2 and average conversion efficiency of 23.01% with industrial equipment and processes.
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Metadata
Title
High-efficiency black silicon tunnel oxide passivated contact solar cells achieved by adjusting the boron diffusion process
Authors
Cui Liu
Jiahui Xu
Zhen Zhang
Zhifeng Liu
Xiao Yuan
Hongbo Li
Publication date
20-08-2021
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 18/2021
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-06834-1

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