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2023 | OriginalPaper | Chapter

High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis

Authors : Kalyan Biswas, Rachita Ghoshhajra, Angsuman Sarkar

Published in: HEMT Technology and Applications

Publisher: Springer Nature Singapore

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Abstract

High Electron Mobility Transistor (HEMT) attained great interest because of its superior electron transport making it suitable for applications in high-speed circuits and high power requirements. These devices are finding special interest to replace conventional field-effect transistors having outstanding performance in the domain of high-frequency applications. In HEMT, the high mobility of electrons and highly confined characteristics of the two-dimensional electron gas made sure that modulation doping could be utilized to have high-speed field-effect transistors having brilliant “Short Channel Effects” (SCEs) and excessive scope of scaling. However, lack of existing experimental results of such a device, designers require a dependable tool for simulation and analysis of the device characteristics in less time and low cost before device is fabricated for commercial use. Therefore, physics-based device simulator for design and performance prediction of the semiconductor device are very important. This book chapter describes an overview of the HEMT device and its physics-based simulation for performance analysis.

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previous chapter Performance Analysis of AlGaN/GaN HEMT for RF and Microwave Nanoelectronics Applications

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Title: High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis
Authors: Kalyan Biswas
Rachita Ghoshhajra
Angsuman Sarkar
Publisher: Springer Nature Singapore
Book: HEMT Technology and Applications
Print ISBN: 978-981-19-2164-3

Electronic ISBN: 978-981-19-2165-0

Copyright Year: 2023
DOI: https://doi.org/10.1007/978-981-19-2165-0_12

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