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Investigation of Structural, Optical and Electrical Properties of Al Doped SnO2 Thin Films Synthesized by Sol-Gel Read chapter Read first chapter

2018 | OriginalPaper | Chapter

High Quality Nano Thin Layer Silicon Transfer Using Plasma Hydrogenation

Author : F. Okba

Published in: Proceedings of the Third International Symposium on Materials and Sustainable Development

Publisher: Springer International Publishing

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Abstract

In order to transfer thin layers of silicon onto Si substrate, we report the effect of a thin epitaxial layer of SiGe on the nucleation and the growth of hydrogen platelets during plasma hydrogenation. SiGe strained layer was purposely used to introduce H trapping centers into Si wafers. Transmission electron microscopy has been used to quantitatively study the evolution of both density and sizes of these platelets during plasma hydrogenation. Upon hydrogenation, it is shown near SiGe layer that the platelets grow in size, reduce their density and the overall volume they occupy increase. This phenomenon is due to a non-conservative Oswald ripening. At the depth of the SiGe layer, a continuous (100) oriented cracks, which are parallel to the Si surfaces are formed.

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previous chapter Al-Doping Effects on Structural and Morphological Properties of ZnO Aerogels Synthesized in Supercritical Ethanol
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Literature
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Metadata
Title
High Quality Nano Thin Layer Silicon Transfer Using Plasma Hydrogenation
Author
F. Okba
Copyright Year
2018
Book
Proceedings of the Third International Symposium on Materials and Sustainable Development

Print ISBN: 978-3-319-89706-6

Electronic ISBN: 978-3-319-89707-3

Copyright Year: 2018

DOI
https://doi.org/10.1007/978-3-319-89707-3_11

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