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Semiconductors
Published in: Semiconductors 8/2013

01-08-2013 | Physics of Semiconductor Devices

High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz

Authors: I. A. Andreev, O. Yu. Serebrennikova, G. S. Sokolovskii, V. V. Dudelev, N. D. Ilynskaya, G. G. Konovalov, E. V. Kunitsyna, Yu. P. Yakovlev

Published in: Semiconductors | Issue 8/2013

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previous article Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio
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Metadata
Title
High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz
Authors
I. A. Andreev
O. Yu. Serebrennikova
G. S. Sokolovskii
V. V. Dudelev
N. D. Ilynskaya
G. G. Konovalov
E. V. Kunitsyna
Yu. P. Yakovlev
Publication date
01-08-2013
Publisher
Springer US
Published in
Semiconductors / Issue 8/2013
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782613080046

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