Ausgabe 8/2013
Inhalt (21 Artikel)
Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals
A. Sh. Abdinov, R. F. Babayeva, S. I. Amirova, R. M. Rzayev
Optical properties of oxygen-implanted CdS:O layers in terms of band anticrossing theory
N. K. Morozova, A. A. Kanakhin, I. N. Miroshnikova, V. G. Galstyan
Study of the effect of the acid-base surface properties of ZnO, Fe2O3 and ZnFe2O4 oxides on their gas sensitivity to ethanol vapor
S. S. Karpova, V. A. Moshnikov, A. I. Maksimov, S. V. Mjakin, N. E. Kazantseva
Features of the stress-strain state of Si/SiO2/Ge heterostructures with germanium nanoislands of a limited density
V. V. Kuryliuk, O. A. Korotchenkov
(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties
A. D. Bouravleuv, V. N. Nevedomskii, E. V. Ubyivovk, V. F. Sapega, A. I. Khrebtov, Yu. B. Samsonenko, G. E. Cirlin, V. M. Ustinov
Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy
M. P. Mikhailova, I. A. Andreev, E. V. Ivanov, G. G. Konovalov, E. A. Grebentshikova, Yu. P. Yakovlev, E. Hulicius, A. Hospodkova, Y. Pangrac
Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix
V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
X-ray and synchrotron studies of porous silicon
V. N. Sivkov, A. A. Lomov, A. L. Vasil’ev, S. V. Nekipelov, O. V. Petrova
Copolymers of carbazole- and indolocarbazole-containing phenylquinolines as new materials for electroluminescent devices
E. L. Aleksandrova, V. M. Svetlichnyi, T. N. Nekrasova, R. Yu. Smyslov, L. A. Myagkova, N. V. Matyushina, A. R. Tameev, V. D. Pautov, V. V. Kudryavtsev
Transient processes in high-voltage silicon carbide bipolar-junction transistors
V. S. Yuferev, M. E. Levinshtein, P. A. Ivanov, Q. J. Zhang, A. K. Agarwal, J. W. Palmour
850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure
D. A. Vinokurov, A. V. Lyutetskiy, D. N. Nikolaev, V. V. Shamakhov, K. V. Bakhvalov, V. V. Vasylyeva, L. S. Vavilova, M. G. Rastegaeva, I. S. Tarasov
AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide
S. O. Slipchenko, A. A. Podoskin, D. A. Vinokurov, A. D. Bondarev, V. A. Kapitonov, N. A. Pikhtin, P. S. Kop’ev, I. S. Tarasov
Electrical phenomena in a metal/nanooxide/p +-silicon structure during its transformation to a resonant-tunneling diode
G. G. Kareva, M. I. Vexler
Study of the properties of solar cells based on a-Si:H p-i-n structures by admittance spectroscopy
A. S. Gudovskikh, A. S. Abramov, A. V. Bobyl, V. N. Verbitskiy, K. S. Zelentsov, E. M. Ershenko, D. A. Kudryashov, S. A. Kudryashov, A. O. Monastyrenko, A. R. Terra, E. I. Terukov
Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio
A. E. Zhukov, A. V. Savelyev, M. V. Maximov, N. V. Kryzhanovskaya, N. Yu. Gordeev, Yu. M. Shernyakov, A. S. Payusov, A. M. Nadtochiy, F. I. Zubov, V. V. Korenev
High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz
I. A. Andreev, O. Yu. Serebrennikova, G. S. Sokolovskii, V. V. Dudelev, N. D. Ilynskaya, G. G. Konovalov, E. V. Kunitsyna, Yu. P. Yakovlev
Features of defect formation during the growth of double heterostructures for injection lasers based on Al x Ga1 − x As y Sb1 − y /GaSb materials
G. F. Kuznetsov
Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation
N. A. Vlasenko, P. F. Oleksenko, M. A. Mukhlyo, L. I. Veligura
Prospects for the pulsed electrodeposition of zinc-oxide hierarchical nanostructures
N. P. Klochko, Y. O. Myagchenko, E. E. Melnychuk, V. R. Kopach, E. S. Klepikova, V. N. Lyubov, G. S. Khrypunov, A. V. Kopach
Effect of annealing in argon on the properties of thermally deposited gallium-oxide films
V. M. Kalygina, V. V. Vishnikina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, S. Y. Tcupiy, T. M. Yaskevich
Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures
A. A. Pastor, U. V. Prokhorova, P. Yu. Serdobintsev, V. V. Chaldyshev, M. A. Yagovkina