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Semiconductors

Ausgabe 11/2023

Selected articles from Fizika i Tekhnika Poluprovodnikov. Editor-in-Chief of Fizika i Tekhnika Poluprovodnikov: S.V. Ivanov

Inhalt (8 Artikel)

Application of RIE-Technology to Control Responsivity of 4H-SiC Photodiodes

A. V. Afanasev, V. V. Zabrodskiy, V. A. Ilyin, V. V. Luchinin, A. V. Nikolaev, A. V. Serkov, V. V. Trushlyakova, D. A. Chigirev

Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice

A. V. Babichev, E. V. Pirogov, M. S. Sobolev, D. V. Denisov, H. A. Fominykh, A. I. Baranov, A. S. Gudovskikh, I. A. Melnichenko, P. A. Yunin, V. N. Nevedomsky, M. V. Tokarev, B. Ya. Ber, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov

Temperature Dependencies of Radiative and Nonradiative Carrier Lifetimes in InGaAs Quantum Well-Dots

A. M. Nadtochiy, I. A. Melnichenko, K. A. Ivanov, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov, N. V. Kryzhanovskaya, A. E. Zhukov

The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures

I. I. Novikov, I. A. Nyapshaev, A. G. Gladyshev, V. V. Andryushkin, A. V. Babichev, L. Yu. Karachinsky, Yu. M. Shernyakov, D. V. Denisov, N. V. Kryzhanovskaya, A. E. Zhukov, A. Yu. Egorov

Maximum Hopping Direct Current Conductivity via Hydrogen-like Impurities in Semiconductors

N. A. Poklonski, S. A. Vyrko, I. I. Anikeev, A. G. Zabrodskii

Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption

S. N. Timoshnev, G. V. Benemanskaya, A. M. Mizerov, M. S. Sobolev, Ya. B. Enns

Internal Loss in Diode Lasers with Quantum Well-Dots

A. E. Zhukov, A. M. Nadtochiy, N. V. Kryzhanovskaya, Yu. M. Shernyakov, N. Yu. Gordeev, A. A. Serin, S. A. Mintairov, N. A. Kalyuzhnyy, A. S. Payusov, G. O. Kornyshov, M. V. Maximov, Y. Wang

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