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Published in: Journal of Materials Science: Materials in Electronics 11/2018

19-03-2018

Hydrothermal synthesis of Zn-doped Ni–Mn–Al–O thin films toward high-performance negative temperature coefficient thermistor

Authors: Sen Liang, Changgong Cao, Yu Yuan, Haibo Li, Min Luo, Mangmang Gao, Xiao Zhang

Published in: Journal of Materials Science: Materials in Electronics | Issue 11/2018

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Abstract

In this study, Zn-doped Ni–Mn–Al–O negative temperature coefficient thermistor (NTC) film with high electrical performance has been demonstrated. XRD, XPS, SEM and electrical measurements were carried out to explore the impact of Zn-doping. The XRD analysis of NiMn1.8−xAl0.2ZnxO4 films confirmed the cubic spinel crystal phase regardless of x. The SEM image illustrated that the morphology of NiMn1.8−xAl0.2ZnxO4 is closely related to the Zn doping amount. The XPS showed that the relative molar content of Mn3+ and Mn4+ increased with the increase of Zn doping concentration. Remarkably, the Zn-doped Ni–Mn–Al–O film presented the typical NTC characteristics, and the room temperature resistance (R25) increased with the improvement in Zn doping concentration. Moreover, the thermistor constant B25/50 remained reasonably high from 4088 to 4272 K. Meanwhile, the aging test showed that the Zn-doped films were more stable, even aging at 150 °C for 500 h.

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Metadata
Title
Hydrothermal synthesis of Zn-doped Ni–Mn–Al–O thin films toward high-performance negative temperature coefficient thermistor
Authors
Sen Liang
Changgong Cao
Yu Yuan
Haibo Li
Min Luo
Mangmang Gao
Xiao Zhang
Publication date
19-03-2018
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 11/2018
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-8927-1

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