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Journal of Materials Science: Materials in Electronics

Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode

  • 28-07-2020
Published in:
Authors
A. G. Imer
E. Kaya
A. Dere
A. G. Al-Sehemi
A. A. Al-Ghamdi
A. Karabulut
F. Yakuphanoglu
Published in
Journal of Materials Science: Materials in Electronics | Issue 17/2020

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Abstract

In this study, semiconductor device applications of organic material sunset yellow (SY) (C16H10N2Na2O7S2) has been investigated. The SY thin film was grown on n-Si via spin coating method and the Au/SY/n-Si/Au heterojunction was fabricated. The basic diode parameters of device were determined by the current–voltage (I–V) and capacitance–voltage (C–V) measurements at the room temperature. The values of the ideality factory (n) and barrier height (Φb) were evaluated as 1.15 and 0.70 eV, respectively; and series resistance (Rs) of device was found using Norde functions. The values of built in potential, donor concentration, Fermi energy level and barrier height were also estimated from the linear C−2–V curves with reverse bias room temperature and difference frequency. Furthermore, I–V measurements were applied under different illuminations; some photoelectrical parameters of device were evaluated to understand the photo response properties of the device. Consequently, the results confirmed that the barrier height can be modified by interfacial SY layer, and the device can be used in optoelectronic applications such as optical sensor or photodiode.

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previous article Novel red-emitting BaGeTeO6:Sm3+ phosphors with high color purity for NUV excited with white LEDs
next article Dielectric behaviors and electrical properties of Gd-doped Aurivillius KBi4Ti4O15 ceramics
Title
Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode
Authors
A. G. Imer
E. Kaya
A. Dere
A. G. Al-Sehemi
A. A. Al-Ghamdi
A. Karabulut
F. Yakuphanoglu
Publication date
28-07-2020
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 17/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-04029-8
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