Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

In this paper, we explore the quantitative investigation of the high-frequency performance of gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) MOSFET and compared with silicon nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOSFET over SiNW MOSFET in terms of transconductance \((\hbox {g}_{\mathrm{m}})\), cut-off frequency \((f_{\mathrm{T}})\), maximum oscillator frequency \((f_{\mathrm{MAX}})\), power gains (Gma, G\({_\mathrm{MT}}\)) parasitic capacitances, stern’s stability factor and intrinsic delay. Further, using three-dimensional device simulations, we have also examined the efficacy of parameter variations in terms of oxide thickness, radius of silicon nanowire, channel length and gate metal workfunction engineering on RF/microwave figure of merits of GEWE-SiNW MOSFET. Simulation result reveals significant enhancement in \(f_{\mathrm{T}}\) and \(f_{\mathrm{MAX}}\); and a reduction in switching time in GEWE-SiNW MOSFET due to alleviated short channel effects, improved drain current and smaller parasitic capacitance, thus providing detailed knowledge about the device’s RF performance at such aggressively scaled dimensions.