Improving the electrical and mechanical performances of embedded capacitance materials by introducing tungsten disulfide nanoflakes into the dielectric layer

Embedded capacitance materials have attracted tremendous attention because of their prominent merits in comparison with discrete capacitors. However, the currently used embedded capacitance materials are suffering technical problems such as limited electrical and mechanical performances, which can hardly adapt to the rapid developments of next-generation electronics. Here, we present an effective approach for improving the electrical and mechanical performances by adding two-dimensional (2D) transition metal dichalcogenides (TMDC) tungsten disulfide (WS₂) nanoflakes into the barium titanate/epoxy resin (BT/ER) system. The anti-sedimentation capability, viscosity and film-formation capability of pastes synthesized by different kinds and amounts of fillers were investigated. The introduction of semiconducting WS₂ nanoflakes can work as inner micro-electrodes and is beneficial to the dispersion of BT particles in ER matrix. The dielectric constant and the peel strength can be improved to 22.54 at 1 kHz and 9.4 N/mm, respectively. The restricted dielectric loss below 0.07 at 1 kHz can be accounted by the lower conductivity of WS₂ nanoflakes. The introduction of WS₂ nanoflakes into BT/ER system may provide new avenues for fabrication of advanced embedded capacitance materials. Further performance improvements may be achieved by optimizing the variety, structure and chemical properties of TMDCs.