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Published in: Journal of Materials Science: Materials in Electronics 8/2021

24-03-2021

Improving the visible-light photocatalytic activity of Bi2O4 by the combination of the p–n junction and oxygen vacancy strategy for the degradation of organic pollutants

Authors: Chengyu Li, Cuiqing Zhang, Shizheng Zheng, Changyuan Hu, Feng Qin, Lin Wei, Ruofan Yang, Yanting Ma

Published in: Journal of Materials Science: Materials in Electronics | Issue 8/2021

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Abstract

Constructing p–n heterojunction has been recognized as an effective solution to facilitate the separation of photogenerated carriers through the internal electric field. The introduction of oxygen vacancies (OVs) on the surface of photocatalyst can produce an intermediate band (IB) below the conduction band (CB) of photocatalyst and act as electron trap centers. The catalytic activity of photocatalyst can be improved by adopting p–n heterojunction or OVs strategy, respectively. In this paper, a novel high-performance BiOCl-OVs/Bi2O4 p–n heterostructure, combining the advantages of the above two strategies, was successfully synthesized via a facile mechanical stirring method. The structure, morphology, and photoelectrochemical properties of the samples were studied in detail. The obtained BiOCl-OVs/Bi2O4 catalysts show enhanced visible-light photocatalytic activity compared with pure Bi2O4. The apparent rate constant of the optimal BiOCl-OVs/Bi2O4-2/5 sample is 1.66 and 2.71 times higher than that of Bi2O4 for the degradation of methyl orange (MO) and bisphenol A (BPA), respectively. The improved photocatalytic performance of BiOCl-OVs/Bi2O4 catalyst is mainly attributed to the combined p–n heterojunction effect and OVs formed on the surface of BiOCl. Finally, a probable photocatalytic reaction mechanism was proposed.

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Metadata
Title
Improving the visible-light photocatalytic activity of Bi2O4 by the combination of the p–n junction and oxygen vacancy strategy for the degradation of organic pollutants
Authors
Chengyu Li
Cuiqing Zhang
Shizheng Zheng
Changyuan Hu
Feng Qin
Lin Wei
Ruofan Yang
Yanting Ma
Publication date
24-03-2021
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 8/2021
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-05696-x

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