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Semiconductors
Published in: Semiconductors 6/2020

01-06-2020 | SURFACES, INTERFACES, AND THIN FILMS

Influence of Ni-Doping in ZnO Thin Films Coated on Porous Silicon Substrates and ZnO|PS Based Hetero-Junction Diodes

Authors: V. L. Priya, N. Prithivikumaran

Published in: Semiconductors | Issue 6/2020

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Abstract

Ni2+-doped ZnO thin films were prepared for various Ni concentration on the porous silicon substrates. The residual stress in the ZnO thin film is relaxed with increase in the concentration of Ni. FESEM images show the growth of pillar-like nanostructures over the entire porous silicon substrates. The variation of resistivity due to UV illumination was observed for the Ni-doped ZnO thin films. Ideality factor value is less for the ZnO:Ni|PS hetero-junction diode than ZnO|PS hetero-junction, Ni doping in ZnO improves the rectifying behavior.
previous article Optical Properties and Critical Points of PbSe Nanostructured Thin Films
next article Electronic Properties of Silicene Films Subjected to Neutron Transmutation Doping

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Metadata
Title
Influence of Ni-Doping in ZnO Thin Films Coated on Porous Silicon Substrates and ZnO|PS Based Hetero-Junction Diodes
Authors
V. L. Priya
N. Prithivikumaran
Publication date
01-06-2020
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 6/2020
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782620060135

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